All MOSFET. HM30N10D Datasheet

 

HM30N10D MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM30N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 39 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: DFN5X6-8L

 HM30N10D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM30N10D Datasheet (PDF)

 ..1. Size:602K  cn hmsemi
 hm30n10d.pdf

HM30N10D HM30N10D

Pb Free ProductHM30N10DN-Channel Enhancement Mode Power MOSFET Description The HM30N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A RDS(ON)

 7.1. Size:931K  cn hmsemi
 hm30n10.pdf

HM30N10D HM30N10D

HM30N10 N-Channel Enhancement Mode Power MOSFET Description The HM30N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A RDS(ON)

 7.2. Size:642K  cn hmsemi
 hm30n10k.pdf

HM30N10D HM30N10D

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A RDS(ON)

 8.1. Size:144K  chenmko
 chm30n15lngp.pdf

HM30N10D HM30N10D

CHENMKO ENTERPRISE CO.,LTDCHM30N15LNGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CURRENT 28 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)* Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. 0

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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