HM3205B Datasheet and Replacement
Type Designator: HM3205B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 105 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 470 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO220
HM3205B substitution
HM3205B Datasheet (PDF)
hm3205b.pdf

HM3205B N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3205B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =55V,ID =105A RDS(ON)
hm3205d.pdf

HM3205D N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3205D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =55V,ID =105A RDS(ON)
hm3205.pdf

HM3205 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3205 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =55V,ID =120A RDS(ON)
chm3203cmgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM3203CMGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 6.0 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59/SOT-346 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)
Datasheet: HM30N10D , HM30N10K , HM30P02K , HM30P03Q , HM30P10K , HM30P55 , HM30P55K , HM3205 , 2N7002 , HM3205D , HM3207 , HM3207B , HM3207BD , HM3207D , HM3207T , HM32N20 , HM32N20F .
Keywords - HM3205B MOSFET datasheet
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