HM3205B
MOSFET. Datasheet pdf. Equivalent
Type Designator: HM3205B
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 180
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 105
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 125
nC
trⓘ - Rise Time: 19
nS
Cossⓘ -
Output Capacitance: 470
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006
Ohm
Package:
TO220
HM3205B
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM3205B
Datasheet (PDF)
..1. Size:703K cn hmsemi
hm3205b.pdf 
HM3205B N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3205B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =55V,ID =105A RDS(ON)
8.1. Size:858K cn hmsemi
hm3205d.pdf
HM3205D N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3205D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =55V,ID =105A RDS(ON)
8.2. Size:587K cn hmsemi
hm3205.pdf
HM3205 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3205 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =55V,ID =120A RDS(ON)
9.1. Size:78K chenmko
chm3203cmgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM3203CMGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 6.0 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59/SOT-346 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)
9.2. Size:379K cn hmsemi
hm3207d.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)
9.3. Size:492K cn hmsemi
hm3207.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)
9.4. Size:675K cn hmsemi
hm3207t.pdf
HM3207TN-Channel Enhancement Mode Power MOSFET Description The HM3207T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)
9.5. Size:512K cn hmsemi
hm3207bd.pdf
HM3207BDN-Channel Enhancement Mode Power MOSFET Description The HM3207BD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =70V,ID =180A Schematic diagram RDS(ON)
9.6. Size:602K cn hmsemi
hm3207b.pdf
HM3207BN-Channel Enhancement Mode Power MOSFET Description The HM3207B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =70V,ID =180A Schematic diagram RDS(ON)
Datasheet: WPB4002
, FDM15-06KC5
, FQD2N60CTM
, FDM47-06KC5
, FDPF045N10A
, FMD15-06KC5
, FDMS8672S
, FMD21-05QC
, IRFP250N
, FDMS86368F085
, FMD47-06KC5
, FDBL86361F085
, FMK75-01F
, FMM110-015X2F
, FMM150-0075X2F
, FMM22-05PF
, FMM22-06PF
.
