All MOSFET. HM3306 Datasheet

 

HM3306 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM3306
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 150 W
   Maximum Drain-Source Voltage |Vds|: 60 V
   Maximum Gate-Source Voltage |Vgs|: 25 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 180 A
   Maximum Drain-Source On-State Resistance (Rds): 0.005 Ohm
   Package: TO220

 HM3306 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM3306 Datasheet (PDF)

 ..1. Size:1238K  cn hmsemi
 hm3306.pdf

HM3306 HM3306

Pin Description Features VDSS=60VVGSS=25VID=180A RDS(ON)=5m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter Sys

 9.1. Size:101K  chenmko
 chm3301pagp.pdf

HM3306 HM3306

CHENMKO ENTERPRISE CO.,LTDCHM3301PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 28 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* Super high density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* Hi

 9.2. Size:174K  chenmko
 chm3301jgp.pdf

HM3306 HM3306

CHENMKO ENTERPRISE CO.,LTDCHM3301JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7.0 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

 9.3. Size:1217K  cn hmsemi
 hm3307b.pdf

HM3306 HM3306

HM3307B 70VDS25VGS114A(ID) N-Channel Enha ncement Mode MOSFET Pin Description Features VDSS=70VVGSS=25VID=114A RDS(ON)=8m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter SystemSwitching Time Test Circuit and HM3307B

 9.4. Size:436K  cn hmsemi
 hm3305d.pdf

HM3306 HM3306

5D N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A RDS(ON)

 9.5. Size:652K  cn hmsemi
 hm3305.pdf

HM3306 HM3306

HM3305N-Channel Enhancement Mode Power MOSFET Description The HM3305 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A RDS(ON)

 9.6. Size:1133K  cn hmsemi
 hm3307.pdf

HM3306 HM3306

Pin Description Features VDSS=80VVGSS=25VID=110A RDS(ON)=9m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter System

 9.7. Size:702K  cn hmsemi
 hm3307a.pdf

HM3306 HM3306

HM N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3307A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =80V,ID =120A RDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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