HM3400 Specs and Replacement

Type Designator: HM3400

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.8 nS

Cossⓘ - Output Capacitance: 99 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm

Package: SOT23

HM3400 substitution

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HM3400 datasheet

 ..1. Size:384K  cn hmsemi
 hm3400 sot23-3l.pdf pdf_icon

HM3400

HM3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400 uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S GENERAL FEATURES VDS = 30V,ID = 5.8A Schematic diagram RDS(ON) ... See More ⇒

 0.1. Size:1663K  cn vbsemi
 hm3400pr.pdf pdf_icon

HM3400

HM3400PR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.022 at VGS = 4.5 V 6.8 RoHS 30 10 nC COMPLIANT APPLICATIONS 0.027 at VGS = 2.5 V 6.0 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n... See More ⇒

 0.2. Size:478K  cn hmsemi
 hm3400c.pdf pdf_icon

HM3400

N-Channel Enhancement Mode Power MOSFET D Description The uses advanced trench technology to provide G excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = 30V,ID = 3.6A RDS(ON) ... See More ⇒

 0.3. Size:679K  cn hmsemi
 hm3400dr.pdf pdf_icon

HM3400

HM3400DR N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400DR uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S GENERAL FEATURES VDS = 30V,ID = 8 A Schematic diagram RDS(ON) ... See More ⇒

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Detailed specifications: HM32N20, HM32N20F, HM3305, HM3305D, HM3306, HM3307, HM3307A, HM3307B, IRFP460, HM3400B, HM3400C, HM3400D, HM3400DR, HM3401, HM3401B, HM3401C, HM3401D

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.