HM3401D
MOSFET. Datasheet pdf. Equivalent
Type Designator: HM3401D
Marking Code: 3401D
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 4.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.5
nC
trⓘ - Rise Time: 3
nS
Cossⓘ -
Output Capacitance: 115
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055
Ohm
Package:
SOT23
HM3401D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM3401D
Datasheet (PDF)
..1. Size:588K cn hmsemi
hm3401d.pdf
HM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.6A RDS(ON)
8.1. Size:547K cn hmsemi
hm3401.pdf
HM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)
8.2. Size:560K cn hmsemi
hm3401c.pdf
HM3401CP-Channel Enhancement Mode Power MOSFET Description DThe HM3401C uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. SGeneral Features VDS = -30V,ID = -2.5A Schematic diagram RDS(ON)
8.3. Size:459K cn hmsemi
hm3401b.pdf
HM3401B P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3401B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)
8.4. Size:929K cn hmsemi
hm3401pr.pdf
HM3401PR P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3401PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -5.2A RDS(ON)
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