HM3406B MOSFET. Datasheet pdf. Equivalent
Type Designator: HM3406B
Marking Code: 3406
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 5.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.2 nC
trⓘ - Rise Time: 2.5 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
Package: SOT23
HM3406B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM3406B Datasheet (PDF)
hm3406b.pdf
HM3406BN-Channel Enhancement Mode Power MOSFET Description DThe HM3406 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable Gfor use as a load switch and PWM applications. SGenera Features VDS = 30V,ID = 5.8A Schematic diagram RDS(ON)
hm3400pr.pdf
HM3400PRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n
hm3401.pdf
HM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)
hm3401d.pdf
HM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.6A RDS(ON)
hm3400 sot23-3l.pdf
HM3400N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400 uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES VDS = 30V,ID = 5.8A Schematic diagram RDS(ON)
hm3401c.pdf
HM3401CP-Channel Enhancement Mode Power MOSFET Description DThe HM3401C uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. SGeneral Features VDS = -30V,ID = -2.5A Schematic diagram RDS(ON)
hm3400c.pdf
N-Channel Enhancement Mode Power MOSFET DDescription The uses advanced trench technology to provide Gexcellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = 30V,ID = 3.6A RDS(ON)
hm3400dr.pdf
HM3400DRN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400DR uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES VDS = 30V,ID = 8 A Schematic diagram RDS(ON)
hm3407b.pdf
HM3407BP-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3407B uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. SGENERAL FEATURES VDS = -30V,ID = -4.1A Schematic diagram RDS(ON)
hm3407a.pdf
HM3407AP-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. SGENERAL FEATURES VDS = -30V,ID = -4.1A Schematic diagram RDS(ON)
hm3401b.pdf
HM3401B P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3401B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)
hm3400d.pdf
HM3400DN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400D uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES VDS = 30V,ID = 5.0A Schematic diagram RDS(ON)
hm3401pr.pdf
HM3401PR P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3401PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -5.2A RDS(ON)
hm3400b.pdf
3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The 3400 uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES VDS = 30V,ID = 5.8A Schematic diagram RDS(ON)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
