HM3421 Specs and Replacement

Type Designator: HM3421

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT23

HM3421 substitution

- MOSFET ⓘ Cross-Reference Search

 

HM3421 datasheet

 ..1. Size:643K  cn hmsemi
 hm3421.pdf pdf_icon

HM3421

HM3421 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3421 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON) ... See More ⇒

 0.1. Size:562K  cn hmsemi
 hm3421b.pdf pdf_icon

HM3421

HM3421B P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3421B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON) ... See More ⇒

 9.1. Size:568K  cn hmsemi
 hm3422.pdf pdf_icon

HM3421

HM3422 N-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM3422 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a S Battery protection or in other Switching application. Schematic diagram GENERAL FEATURES VDS =60V,ID =3A RDS(ON) ... See More ⇒

 9.2. Size:488K  cn hmsemi
 hm3422a.pdf pdf_icon

HM3421

HM N Channel Enhancement Mode MOSFET DESCRIPTION The HM3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook co... See More ⇒

SHOW MORE

Detailed specifications: HM3407A, HM3407B, HM3413, HM3413B, HM3414, HM3414B, HM3415E, HM3416B, IRF630, HM3421B, HM3422, HM3422A, HM3426B, HM35N03D, HM35N03Q, HM35P03, HM35P03D

Keywords - HM3421 MOSFET specs

 HM3421 cross reference

 HM3421 equivalent finder

 HM3421 pdf lookup

 HM3421 substitution

 HM3421 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.