All MOSFET. HM3422 Datasheet

 

HM3422 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM3422
   Marking Code: 22AM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: SOT23

 HM3422 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM3422 Datasheet (PDF)

 ..1. Size:568K  cn hmsemi
 hm3422.pdf

HM3422 HM3422

HM3422N-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM3422 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a SBattery protection or in other Switching application. Schematic diagram GENERAL FEATURES VDS =60V,ID =3A RDS(ON)

 0.1. Size:488K  cn hmsemi
 hm3422a.pdf

HM3422 HM3422

HM N Channel Enhancement Mode MOSFET DESCRIPTION The HM3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook co

 9.1. Size:562K  cn hmsemi
 hm3421b.pdf

HM3422 HM3422

HM3421B P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3421B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)

 9.2. Size:442K  cn hmsemi
 hm3426b.pdf

HM3422 HM3422

N-Channel Enhancement Mode MOSFET HM3426BDESCRIPTIONTheHM3426Busesadvanced trench technology to provideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)

 9.3. Size:643K  cn hmsemi
 hm3421.pdf

HM3422 HM3422

HM3421 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3421 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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