HM35P03D Datasheet and Replacement
Type Designator: HM35P03D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: DFN5X6-8L
HM35P03D substitution
HM35P03D Datasheet (PDF)
hm35p03d.pdf

HM35P03DP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM35P03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 4.5V. SGENERAL FEATURES Schematic diagram V = -30V,ID = -35A D S RDS(ON)
hm35p03k.pdf

HM35P03KP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM35P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -35A D SRDS(ON)
hm35p03.pdf

HM35P03P-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM35P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -35A D SRDS(ON)
hm35p04d.pdf

HM35P04DP-Channel Enhancement Mode Power MOSFET Description The HM35P04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-35A RDS(ON)
Datasheet: HM3421 , HM3421B , HM3422 , HM3422A , HM3426B , HM35N03D , HM35N03Q , HM35P03 , 5N60 , HM35P03K , HM35P04D , HM3710 , HM3710K , HM3800D , HM3808 , HM3N10MR , HM3N10PR .
History: IXFT30N60X | APQ84SN06A
Keywords - HM35P03D MOSFET datasheet
HM35P03D cross reference
HM35P03D equivalent finder
HM35P03D lookup
HM35P03D substitution
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History: IXFT30N60X | APQ84SN06A



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