HM35P04D Datasheet and Replacement. Cross Reference Search

HM35P04D Datasheet (PDF)

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HM35P04DP-Channel Enhancement Mode Power MOSFET Description The HM35P04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-35A RDS(ON)

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HM35P03DP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM35P03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 4.5V. SGENERAL FEATURES Schematic diagram V = -30V,ID = -35A D S RDS(ON)

8.2. Size:1065K cn hmsemi
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HM35P03KP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM35P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -35A D SRDS(ON)

8.3. Size:1373K cn hmsemi
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HM35P03P-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM35P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -35A D SRDS(ON)

Datasheet: HM3422 , HM3422A , HM3426B , HM35N03D , HM35N03Q , HM35P03 , HM35P03D , HM35P03K , SPP20N60C3 , HM3710 , HM3710K , HM3800D , HM3808 , HM3N10MR , HM3N10PR , HM3N120A , HM3N120F .