HM3N10PR Datasheet and Replacement. Cross Reference Search

HM3N10PR Datasheet (PDF)

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HM3N10PR N-Channel Enhancement Mode Power MOSFET Description DThe HM3N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 3A Schematic diagram RDS(ON)

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HM3N10MRN-Channel Enhancement Mode Power MOSFET Description The HM3N10MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON)

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HM3N120FGeneral Description VDSS 1200 V HM3N120F , the silicon N-channel Enhanced ID 3 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio

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HM3N150AGeneral Description VDSS 1500 V , the silicon N-channel Enhanced I 3 A DPD(TC=25) TBD W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizat