HM3N10PR Specs and Replacement

Type Designator: HM3N10PR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: SOT89

HM3N10PR substitution

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HM3N10PR datasheet

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HM3N10PR

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HM3N10PR

HM3N10MR N-Channel Enhancement Mode Power MOSFET Description The HM3N10MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON) ... See More ⇒

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HM3N10PR

HM3N120F General Description VDSS 1200 V HM3N120F , the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio... See More ⇒

 9.2. Size:422K  cn hmsemi
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HM3N10PR

HM3N150A General Description VDSS 1500 V , the silicon N-channel Enhanced I 3 A D PD(TC=25 ) TBD W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizat... See More ⇒

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Detailed specifications: HM35P03D, HM35P03K, HM35P04D, HM3710, HM3710K, HM3800D, HM3808, HM3N10MR, 13N50, HM3N120A, HM3N120F, HM3N150A, HM3N150F, HM3N25I, HM3N30PR, HM3N40PR, HM3N40R

Keywords - HM3N10PR MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.