2SK68A
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK68A
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.13
V
|Id|ⓘ - Maximum Drain Current: 0.02
A
Tjⓘ - Maximum Junction Temperature: 125
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 250
Ohm
Package:
TO92
2SK68A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK68A
Datasheet (PDF)
9.5. Size:236K inchange semiconductor
2sk682.pdf 
isc N-Channel MOSFET Transistor 2SK682DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSlow onresistanceHigh speed switchingLow drive currentNo secondary breakdownSuitable f
9.6. Size:236K inchange semiconductor
2sk683.pdf
isc N-Channel MOSFET Transistor 2SK683DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSlow onresistanceHigh speed switchingLow drive currentNo secondary breakdownSuitable f
9.7. Size:236K inchange semiconductor
2sk684.pdf
isc N-Channel MOSFET Transistor 2SK684DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSlow onresistanceHigh speed switchingLow drive currentNo secondary breakdownSuitable fo
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