SRC60R078BTF MOSFET Datasheet: N-Ch, 600V, 42A. Full specification with pinout and replacement list

SRC60R078BTF Specs and Replacement

Type Designator: SRC60R078BTF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 136 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm

Package: TO220F

SRC60R078BTF substitution

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SRC60R078BTF datasheet

4.1. Size:1038K 1
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Datasheet 78m , 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power ... See More ⇒

4.2. Size:1038K sanrise-tech
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4.3. Size:1771K sanrise-tech
src60r078bs.pdf pdf_icon

Datasheet 78m , 600V, Super Junction N-Channel Power MOSFET SRC60R078BS General Description Symbol The Sanrise SRC60R078BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density ... See More ⇒

Detailed specifications: HM4302B, 2SK68A, CRJF390N65GC, HCA60R150T, MDP10N027TH, NVHL055N60S5F, OSG60R074HZF, OSG60R074FZF, IRLB3034, SRC60R078BT, SRC60R078BS2, STK0825F, CS25N50AKR, HYG042N10NS1P, HYG042N10NS1B, SUP75N06-08, SUB75N06-08