All MOSFET. SRC60R078BT Datasheet

 

SRC60R078BT Datasheet and Replacement


   Type Designator: SRC60R078BT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 291 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 136 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
   Package: TO247
 

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SRC60R078BT Datasheet (PDF)

 4.1. Size:1038K  1
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SRC60R078BT

Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 4.2. Size:1038K  sanrise-tech
 src60r078b.pdf pdf_icon

SRC60R078BT

Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 4.3. Size:1771K  sanrise-tech
 src60r078bs.pdf pdf_icon

SRC60R078BT

Datasheet78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078BSGeneral Description SymbolThe Sanrise SRC60R078BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

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