HM4453B MOSFET Datasheet: P-Ch, 12V, 9A. Full specification with pinout and replacement list

HM4453B Specs and Replacement

Type Designator: HM4453B

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOP8

HM4453B substitution

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HM4453B datasheet

..1. Size:686K cn hmsemi
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HM4453B P-Channel Enhancement Mode Power MOSFET Description D The HM4453B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -12V,ID = -9A RDS(ON) ... See More ⇒

8.1. Size:659K cn hmsemi
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HM4453A P-Channel Enhancement Mode Power MOSFET D Description The HM4453A uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a S load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -21A RDS(ON) ... See More ⇒

8.2. Size:471K cn hmsemi
hm4453.pdf pdf_icon

HM4453 P-Channel Enhancement Mode Power MOSFET D Description The HM4453 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a S load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -9A RDS(ON) ... See More ⇒

9.1. Size:77K chenmko
chm4450jgp.pdf pdf_icon

CHENMKO ENTERPRISE CO.,LTD CHM4450JGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 7.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power... See More ⇒