FDMC6296 MOSFET. Datasheet pdf. Equivalent

November 2010FDMC6296Single N-Channel Logic-Level Power Trench MOSFET 30 V, 11.5 A, 10.5 mFeatures General Description Max rDS(on) = 10.5 m at VGS = 10 V, ID = 11.5 A This single N-Channel MOSFET in the thermally efficient MicroFET Package has been specifically designed to perform Max rDS(on) = 15 m at VGS = 4.5 V, ID = 10 Awell in Point of Load converters. Providing an

July 2009FDMC6679AZP-Channel PowerTrench MOSFET -30 V, -20 A, 10 mFeatures General DescriptionThe FDMC6679AZ has been designed to minimize losses in Max rDS(on) = 10 m at VGS = -10 V, ID = -11.5 Aload switch applications. Advancements in both silicon and Max rDS(on) = 18 m at VGS = -4.5 V, ID = -8.5 Apackage technologies have been combined to offer the lowest rD

February 2015FDMC6688PP-Channel PowerTrench MOSFET-20 V, -56 A, 6.5 mFeatures General Description Max rDS(on) = 6.5 m at VGS = -4.5 V, ID = -14 AThis P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 9.8 m at VGS = -2.5 V, ID = -11 Abeen optimized for rDS(ON), switching performance and Max rDS(on) =

October 2013FDMC612PZP-Channel PowerTrench MOSFET -20 V, -14 A, 8.4 mFeatures General Description Max rDS(on) = 8.4 m at VGS = -4.5 V, ID = -14 AThis P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 13 m at VGS = -2.5 V, ID = -11 Abeen optimized for rDS(ON), switching performance and High performan

November 2013FDMC610P P-Channel PowerTrench MOSFET -12 V, -80 A, 3.9 mFeatures General Description Max rDS(on) = 3.9 m at VGS = -4.5 V, ID = -22 A This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 6.4 m at VGS = -2.5 V, ID = -16 Aringing of DC/DC converters using either synchronous or Stat

September 2010FDMC6675BZP-Channel Power Trench MOSFET -30 V, -20 A, 14.4 m Features General Description Max rDS(on) = 14.4 m at VGS = -10 V, ID = -9.5 A The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and Max rDS(on) = 27.0 m at VGS = -4.5 V, ID = -6.9 Apackage technologies have been combined to offer the lowest

February 2015FDMC6686PP-Channel PowerTrench MOSFET-20 V, -56 A, 4 mFeatures General Description Max rDS(on) = 4 m at VGS = -4.5 V, ID = -18 AThis P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 5.7 m at VGS = -2.5 V, ID = -16 Abeen optimized for rDS(ON), switching performance and Max rDS(on) =11.5

October 2006FDMC6890NZtmDual N-Channel PowerTrench MOSFET 20V, 4A, Q1:68m, Q2:100mFeatures General DescriptionQ1: N-ChannelFDMC6890NZ is a compact single package solution for DC to DC converters with excellent thermal and switching Max rDS(on) = 68m at VGS = 4.5V, ID = 4Acharacteristics. Inside the Power 33 package features two Max rDS(on) = 100m at VGS = 2

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