HM4488
MOSFET. Datasheet pdf. Equivalent
Type Designator: HM4488
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 5.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 35.8
nC
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 190
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.044
Ohm
Package:
SOP8
HM4488
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM4488
Datasheet (PDF)
..1. Size:530K cn hmsemi
hm4488.pdf 
N-Channel Enhancement Mode Power MOSFET Description The HM4488 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =5.2A RDS(ON)
9.1. Size:458K cn hmsemi
hm4485.pdf
HM4485Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-13A RDS(ON)
9.2. Size:747K cn hmsemi
hm4487b.pdf
HM4487B P-Channel Enhancement Mode Power MOSFET Description DThe HM4487B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. GGeneral Features S VDS =-100V,ID =-3.5A Schematic diagram RDS(ON)
9.3. Size:668K cn hmsemi
hm4485a.pdf
HM4485ADescription The HM4485A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-17.5A RDS(ON)
9.4. Size:1694K cn hmsemi
hm4486e.pdf
HM4486E 100VDS20VGS3.5A(ID) N-Channel Enha ncement Mode MOSFET Features VDSS=100VVGSS=20VID=3.5A Pin Description RDS(ON)=105m(Max.)@VGS=10V RDS(ON)=175m(Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low
9.5. Size:593K cn hmsemi
hm4480.pdf
HM4480N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =40V,ID =10A RDS(ON)
9.6. Size:836K cn hmsemi
hm4484.pdf
HM4484 N-Channel Enhancement Mode Power MOSFET Description The HM4484 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =15A RDS(ON)
9.7. Size:827K cn hmsemi
hm4486a.pdf
HM4486AN-Channel Enhancement Mode Power MOSFET Description The HM4486A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =4A RDS(ON)
9.8. Size:769K cn hmsemi
hm4487a.pdf
HM4487A P-Channel Enhancement Mode Power MOSFET Description DThe HM4487A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. GGeneral Features S VDS =-100V,ID =-7.5A Schematic diagram RDS(ON)
9.9. Size:650K cn hmsemi
hm4487.pdf
HM4487 P-Channel Enhancement Mode Power MOSFET Description DThe HM4487 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. GGeneral Features S VDS =-100V,ID =-4.5A Schematic diagram RDS(ON)
9.10. Size:2069K cn hmsemi
hm4482.pdf
HM4482 100VDS20VGS2.5A(ID) N-Channel Enha ncement Mode MOSFET Features VDSS=100VVGSS=20VID=2.5A RDS(ON)=105m(Max.)@VGS=10V RDS(ON)=115m(Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low On-Resistance Switching Time Test Circuit and Waveforms HSOP-8 top view HM4482 HM4482 SOP-8 - - -Rev. A.0
9.11. Size:577K cn hmsemi
hm4485b.pdf
HM4485BP-Channel Enhancement Mode Power MOSFET Description The HM4485B uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -40V,ID = -7.5A Schematic diagram RDS(ON)
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