HM4618B PDF and Equivalents Search

 

HM4618B Specs and Replacement

Type Designator: HM4618B

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 112 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: SOP8

HM4618B substitution

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HM4618B datasheet

 ..1. Size:830K  cn hmsemi
hm4618b.pdf pdf_icon

HM4618B

HM4618B N and P-Channel Enhancement Mode Power MOSFET Description The HM4618B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =40V,ID =8A Schematic diagram RDS(ON) ... See More ⇒

 8.1. Size:980K  cn hmsemi
hm4618.pdf pdf_icon

HM4618B

HM4618 N and P-Channel Enhancement Mode Power MOSFET Description The HM4618 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel Schematic diagram VDS = 40V,ID =10A RDS(ON) ... See More ⇒

 8.2. Size:659K  cn hmsemi
hm4618sp.pdf pdf_icon

HM4618B

HM4618SP Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The HM4618SP uses advanced trench technology to provide VSSS =20V,IS =6A excellent RSS(ON), low gate charge and operation with gate 2.5V drive voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It Common-drain type is ESD protected. This device is... See More ⇒

 9.1. Size:753K  cn hmsemi
hm4612d.pdf pdf_icon

HM4618B

HM4612D N and P-Channel Enhancement Mode Power MOSFET Description The HM4612D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channel VDS =12V,ID =5A RDS(ON) ... See More ⇒

Detailed specifications: HM4612, HM4612D, HM4614, HM4614B, HM4615, HM4616, HM4616A, HM4618, AO3407, HM4618SP, HM4620D, HM4622, HM4622A, HM4630D, HM4803, HM4805A, HM4805B

Keywords - HM4618B MOSFET specs

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