HM4622 MOSFET. Datasheet pdf. Equivalent
Type Designator: HM4622
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.2 nC
trⓘ - Rise Time: 2.5 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: SOP8
HM4622 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM4622 Datasheet (PDF)
hm4622.pdf
HM4622N and P-Channel Enhancement Mode Power MOSFET Description The HM4622 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.General Features N-channel P-channel N-Channel VDS = 20V,ID =5.0A Schematic diagram RDS(ON)
hm4622a.pdf
HM4622AN and P-Channel Enhancement Mode Power MOSFET Description The HM4622A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.General Features N-channel P-channel N-Channel VDS = 20V,ID =7.5A Schematic diagram RDS(ON)
hm4620d.pdf
HM N and P-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel VDS = 20V,ID = A N-channel P-channelRDS(ON)
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
LIST
Last Update
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F