HM4630D Datasheet and Replacement
Type Designator: HM4630D
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.2 nS
Cossⓘ - Output Capacitance: 48 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: DFN2X2-6L
HM4630D substitution
HM4630D Datasheet (PDF)
hm4630d.pdf

HM4630DN and P-Channel Enhancement Mode Power MOSFET Description The HM4630D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel VDS = 30V,ID =5A N-channel P-channelRDS(ON)
Datasheet: HM4616 , HM4616A , HM4618 , HM4618B , HM4618SP , HM4620D , HM4622 , HM4622A , IRF2807 , HM4803 , HM4805A , HM4805B , HM4806A , HM4806B , HM4806C , HM4812 , HM4813 .
History: AP92T03GP
Keywords - HM4630D MOSFET datasheet
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History: AP92T03GP



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