HM4806A Datasheet and Replacement
Type Designator: HM4806A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 232 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: SOP8
HM4806A substitution
HM4806A Datasheet (PDF)
hm4806a.pdf

HM Description The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =14A Schematic diagram RDS(ON)
hm4806c.pdf

HM4806CDual N-Channel Enhancement Mode Power MOSFET Description The HM4806C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON)
hm4806b.pdf

HM4806BDual N-Channel Enhancement Mode Power MOSFET Description The HM4806B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =21A Schematic diagram RDS(ON)
chm4804ajgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM4804AJGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged a
Datasheet: HM4618SP , HM4620D , HM4622 , HM4622A , HM4630D , HM4803 , HM4805A , HM4805B , AO3401 , HM4806B , HM4806C , HM4812 , HM4813 , HM4821 , HM4822 , HM4822B , HM4826 .
Keywords - HM4806A MOSFET datasheet
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