All MOSFET. HM4828 Datasheet

 

HM4828 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM4828
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.5 nC
   trⓘ - Rise Time: 2.3 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOP8

 HM4828 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM4828 Datasheet (PDF)

 ..1. Size:687K  cn hmsemi
 hm4828.pdf

HM4828 HM4828

HM4828Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4828 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =4.5A Schematic diagram RDS(ON)

 0.1. Size:694K  cn hmsemi
 hm4828a.pdf

HM4828 HM4828

HM4828ADual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4828A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =4.5A Schematic diagram RDS(ON)

 9.1. Size:635K  cn hmsemi
 hm4822b.pdf

HM4828 HM4828

HM4822B Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4822B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =10A Schematic diagram RDS(ON)

 9.2. Size:693K  cn hmsemi
 hm4826.pdf

HM4828 HM4828

HM4826 Dual N-Channel Enhancement Mode Power MOSFET Description The HM4826 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS = 60V,ID =9A RDS(ON)

 9.3. Size:617K  cn hmsemi
 hm4822.pdf

HM4828 HM4828

HM4822 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4822 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =10A Schematic diagram RDS(ON)

 9.4. Size:968K  cn hmsemi
 hm4826a.pdf

HM4828 HM4828

HM4826A Dual N-Channel Enhancement Mode Power MOSFET Description The HM4826A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS = 60V,ID =12.5A RDS(ON)

 9.5. Size:1459K  cn hmsemi
 hm4821.pdf

HM4828 HM4828

HM4821Dual P-Channel Enhancement Mode Power MOSFET Description The HM4821 uses advanced trench technology and D1D2design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. G1 G2General Features S1 S2 VDS =-60V,ID =-6.5A Schematic diagram RDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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