HM4853B Specs and Replacement
Type Designator: HM4853B
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 498 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOP8
HM4853B substitution
- MOSFET ⓘ Cross-Reference Search
HM4853B datasheet
hm4853b.pdf
HM4853B P-Channel Enhancement Mode Power MOSFET D1 D2 Description G1 G2 The HM4853B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2 voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -12V,ID = -8A RDS(ON) ... See More ⇒
hm4853.pdf
P-Channel Enhancement Mode Power MOSFET D1 D2 Description G1 G2 The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2 voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -9A RDS(ON) ... See More ⇒
hm4853a.pdf
HM4853A P-Channel Enhancement Mode Power MOSFET D1 D2 Description G1 G2 The HM4853A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2 voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -20A RS(ON) ... See More ⇒
Detailed specifications: HM4826A, HM4828, HM4828A, HM4830, HM4840, HM4843, HM4853, HM4853A, MMIS60R580P, HM4884, HM4884A, HM4885, HM4885A, HM4886A, HM4886E, HM4887, HM4892A
Keywords - HM4853B MOSFET specs
HM4853B cross reference
HM4853B equivalent finder
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HM4853B substitution
HM4853B replacement
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History: BUK9Y22-100E
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