HM4886A MOSFET Datasheet: N-Ch, 100V, 4A. Full specification with pinout and replacement list

HM4886A Specs and Replacement

Type Designator: HM4886A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 44.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: SOP8

HM4886A substitution

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HM4886A datasheet

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HM N-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =4A Schematic diagram RDS(ON) ... See More ⇒

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hm4886e.pdf pdf_icon

HM4886E 100VDS 20VGS 3.5A(ID) Dual N-Channel Enha ncement Mode MOSFET Features VDSS=100V VGSS= 20V ID=3.5A Pin Description RDS(ON)=105m (Max.)@VGS=10V RDS(ON)=175m (Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low ... See More ⇒

9.1. Size:797K cn hmsemi
hm4885.pdf pdf_icon

HM4885 Dual P-Channel Enhancement Mode Power MOSFET Description D1 D2 The HM4885 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G1 G2 switch or in PWM applications. S1 S2 General Features Schematic diagram VDS = -40V,ID = -7.5A RDS(ON) ... See More ⇒

9.2. Size:577K cn hmsemi
hm4884.pdf pdf_icon

HM Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES Schematic diagram VDS =40V,ID =10A RDS(ON) ... See More ⇒