HM4953B PDF and Equivalents Search

 

HM4953B Specs and Replacement

Type Designator: HM4953B

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOP8

HM4953B substitution

- MOSFET ⓘ Cross-Reference Search

 

HM4953B datasheet

 ..1. Size:763K  cn hmsemi
hm4953b.pdf pdf_icon

HM4953B

HM4953B Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953B uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G load switch or in PWM applications. S S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -5A RDS(ON) ... See More ⇒

 8.1. Size:83K  chenmko
chm4953jgp.pdf pdf_icon

HM4953B

CHENMKO ENTERPRISE CO.,LTD CHM4953JGP SURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High ... See More ⇒

 8.2. Size:625K  cn hmsemi
hm4953c.pdf pdf_icon

HM4953B

HM4953C Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953C uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G load switch or in PWM applications. S S GENERAL FEATURES Schematic diagram VDS = -27V,ID = -5A RDS(ON) ... See More ⇒

 8.3. Size:454K  cn hmsemi
hm4953.pdf pdf_icon

HM4953B

HM4953 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION D1 D2 The HM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2 Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON) ... See More ⇒

Detailed specifications: HM4886A, HM4886E, HM4887, HM4892A, HM4892B, HM4922, HM4953, HM4953A, IRF540, HM4953C, HM4953D, HM4963, HM4N10PR, HM4N150T, HM4N60, HM4N60F, HM4N60I

Keywords - HM4953B MOSFET specs

 HM4953B cross reference

 HM4953B equivalent finder

 HM4953B pdf lookup

 HM4953B substitution

 HM4953B replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 


🌐 : EN  ES  РУ

social

LIST

Last Update

MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10

 

 

 

Popular searches

2n1304 | 2sa979 | 2sc4793 | d965 | mje15031 | irfp150n | mj15025 | mp1620

 

 

↑ Back to Top
.