HM4N60 PDF and Equivalents Search

 

HM4N60 Specs and Replacement

Type Designator: HM4N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49 nS

Cossⓘ - Output Capacitance: 95 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO220C

HM4N60 substitution

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HM4N60 datasheet

 ..1. Size:1050K  cn hmsemi
 hm4n60.pdf pdf_icon

HM4N60

N R N-CHANNEL MOSFET HM4N60 Package MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson 2.4 @Vgs=10V 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS ... See More ⇒

 ..2. Size:460K  cn hmsemi
 hm4n60 hm4n60f.pdf pdf_icon

HM4N60

HM4N60 / HM4N60F HM4N60 / HM4N60F 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 16nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switching ... See More ⇒

 0.1. Size:753K  cn hmsemi
 hm4n60k hm4n60i.pdf pdf_icon

HM4N60

HM4N60K / HM4N60I HM4N60K / HM4N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 16nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switchin... See More ⇒

 9.1. Size:834K  cn hmsemi
 hm4n65k hm4n65i.pdf pdf_icon

HM4N60

HM4N65K/HM4N65I HM4N65K / HM4N65I 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 4.0A, 650V, RDS(on) = 3.0 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 15nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior switc... See More ⇒

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Detailed specifications: HM4953 , HM4953A , HM4953B , HM4953C , HM4953D , HM4963 , HM4N10PR , HM4N150T , IRLZ44N , HM4N60F , HM4N60I , HM4N60K , HM4N65 , HM4N65F , HM4N65I , HM4N65K , HM4N65R .

Keywords - HM4N60 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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