All MOSFET. HM4N60I Datasheet

 

HM4N60I Datasheet and Replacement


   Type Designator: HM4N60I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 13.3 nC
   tr ⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: IPAK
 

 HM4N60I substitution

   - MOSFET ⓘ Cross-Reference Search

 

HM4N60I Datasheet (PDF)

 ..1. Size:753K  cn hmsemi
 hm4n60k hm4n60i.pdf pdf_icon

HM4N60I

HM4N60K / HM4N60IHM4N60K / HM4N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 16nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switchin

 8.1. Size:1050K  cn hmsemi
 hm4n60.pdf pdf_icon

HM4N60I

N RN-CHANNEL MOSFET HM4N60 Package MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson 2.4 @Vgs=10V13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 8.2. Size:460K  cn hmsemi
 hm4n60 hm4n60f.pdf pdf_icon

HM4N60I

HM4N60 / HM4N60FHM4N60 / HM4N60F600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 16nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching

 9.1. Size:834K  cn hmsemi
 hm4n65k hm4n65i.pdf pdf_icon

HM4N60I

HM4N65K/HM4N65IHM4N65K / HM4N65I 650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.0A, 650V, RDS(on) = 3.0 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 15nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superior switc

SHOW MORE

Datasheet: HM4953B , HM4953C , HM4953D , HM4963 , HM4N10PR , HM4N150T , HM4N60 , HM4N60F , IRF630 , HM4N60K , HM4N65 , HM4N65F , HM4N65I , HM4N65K , HM4N65R , HM4N70F , HM4N90I .

Keywords - HM4N60I MOSFET datasheet

 HM4N60I cross reference
 HM4N60I equivalent finder
 HM4N60I lookup
 HM4N60I substitution
 HM4N60I replacement

 

 
Back to Top

 


 
.