HM4N65F Datasheet and Replacement. Cross Reference Search

HM4N65F Datasheet (PDF)

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HM4N65 / HM4N65FHM4N65 / HM4N65F 650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.0A, 650V, RDS(on) = 3.0 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 15nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superior switch

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HM4N65K/HM4N65IHM4N65K / HM4N65I 650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.0A, 650V, RDS(on) = 3.0 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 15nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superior switc

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hm4n65r.pdf pdf_icon

HM4N65RGeneral Description VDSS 650 V HM4N65R the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and

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hm4n60.pdf pdf_icon

N RN-CHANNEL MOSFET HM4N60 Package MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson 2.4 @Vgs=10V13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS