HM50N03K Specs and Replacement
Type Designator: HM50N03K
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ -
Output Capacitance: 280 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO252
- MOSFET ⓘ Cross-Reference Search
HM50N03K datasheet
..1. Size:572K cn hmsemi
hm50n03k.pdf 
HM50N03K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =50A RDS(ON) ... See More ⇒
7.1. Size:459K cn hmsemi
hm50n03i.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON) ... See More ⇒
8.1. Size:97K chenmko
chm50n06pagp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM50N06PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 36 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power... See More ⇒
8.2. Size:68K chenmko
chm50n06ngp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM50N06NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 50 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. (D2PAK) 0.420(10.67) 0.190(4.83) * Super high dense cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.... See More ⇒
8.3. Size:716K cn hmsemi
hm50n06ka.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON) ... See More ⇒
8.4. Size:529K cn hmsemi
hm50n06i.pdf
HM50N06I N-Channel Enhancement Mode Power MOSFET Description The HM50N06I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON) ... See More ⇒
8.5. Size:588K cn hmsemi
hm50n06.pdf
HM50N06 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =50A RDS(ON) ... See More ⇒
8.6. Size:730K cn hmsemi
hm50n06d.pdf
HM50N06D N-Channel Enhancement Mode Power MOSFET Description The HM50N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =50A RDS(ON) ... See More ⇒
8.7. Size:714K cn hmsemi
hm50n08.pdf
HM50N08 N-Channel Enhancement Mode Power MOSFET Description The HM50N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =50A RDS(ON) ... See More ⇒
8.8. Size:531K cn hmsemi
hm50n08k.pdf
H N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =50A RDS(ON) ... See More ⇒
8.9. Size:927K cn hmsemi
hm50n06a.pdf
HM50N06A N-Channel Enhancement Mode Power MOSFET Description The HM50N06A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON) ... See More ⇒
8.10. Size:577K cn hmsemi
hm50n06k.pdf
HM50N06K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =50A RDS(ON) ... See More ⇒
Detailed specifications: HM4N65I, HM4N65K, HM4N65R, HM4N70F, HM4N90I, HM5001, HM50N03, HM50N03I, IRFP250N, HM50N06, HM50N06A, HM50N06D, HM50N06I, HM50N06K, HM50N06KA, HM50N08, HM50N08K
Keywords - HM50N03K MOSFET specs
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