All MOSFET. HM50N06A Datasheet

 

HM50N06A MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM50N06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 5.1 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO220

 HM50N06A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM50N06A Datasheet (PDF)

 ..1. Size:927K  cn hmsemi
 hm50n06a.pdf

HM50N06A HM50N06A

HM50N06AN-Channel Enhancement Mode Power MOSFET Description The HM50N06A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

 7.1. Size:97K  chenmko
 chm50n06pagp.pdf

HM50N06A HM50N06A

CHENMKO ENTERPRISE CO.,LTDCHM50N06PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 36 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 7.2. Size:68K  chenmko
 chm50n06ngp.pdf

HM50N06A HM50N06A

CHENMKO ENTERPRISE CO.,LTDCHM50N06NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 50 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)0.420(10.67)0.190(4.83)* Super high dense cell design for extremely low RDS(ON). 0.380(9.69)0.160(4.

 7.3. Size:716K  cn hmsemi
 hm50n06ka.pdf

HM50N06A HM50N06A

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

 7.4. Size:529K  cn hmsemi
 hm50n06i.pdf

HM50N06A HM50N06A

HM50N06IN-Channel Enhancement Mode Power MOSFET Description The HM50N06I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

 7.5. Size:588K  cn hmsemi
 hm50n06.pdf

HM50N06A HM50N06A

HM50N06N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =50A RDS(ON)

 7.6. Size:730K  cn hmsemi
 hm50n06d.pdf

HM50N06A HM50N06A

HM50N06D N-Channel Enhancement Mode Power MOSFET Description The HM50N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =50A RDS(ON)

 7.7. Size:577K  cn hmsemi
 hm50n06k.pdf

HM50N06A HM50N06A

HM50N06KN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =50A RDS(ON)

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History: SVF4N65RT | BRCS035N10SHZC | WNM07N65F | BRCS080N03DSC | BRCS200N10SZC | RU2H50R | 2N4416ACSM

 

 
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