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HM50N08 Spec and Replacement


   Type Designator: HM50N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 337 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO220

 HM50N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM50N08 Specs

 ..1. Size:714K  cn hmsemi
 hm50n08.pdf pdf_icon

HM50N08

HM50N08 N-Channel Enhancement Mode Power MOSFET Description The HM50N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =50A RDS(ON) ... See More ⇒

 0.1. Size:531K  cn hmsemi
 hm50n08k.pdf pdf_icon

HM50N08

H N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =50A RDS(ON) ... See More ⇒

 8.1. Size:97K  chenmko
 chm50n06pagp.pdf pdf_icon

HM50N08

CHENMKO ENTERPRISE CO.,LTD CHM50N06PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 36 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power... See More ⇒

 8.2. Size:68K  chenmko
 chm50n06ngp.pdf pdf_icon

HM50N08

CHENMKO ENTERPRISE CO.,LTD CHM50N06NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 50 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. (D2PAK) 0.420(10.67) 0.190(4.83) * Super high dense cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.... See More ⇒

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Detailed specifications: HM50N03I , HM50N03K , HM50N06 , HM50N06A , HM50N06D , HM50N06I , HM50N06K , HM50N06KA , IRF9540N , HM50N08K , HM50N10K , HM50N15 , HM50N15D , HM50N20 , HM50N20D , HM50P02K , HM50P03 .

History: SML80T27

Keywords - HM50N08 MOSFET specs

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