HM50P06 MOSFET Datasheet: P-Ch, 60V, 50A. Full specification with pinout and replacement list

HM50P06 Specs and Replacement

Type Designator: HM50P06

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 95 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 719 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TO220

HM50P06 substitution

- MOSFET ⓘ Cross-Reference Search

HM50P06 datasheet

..1. Size:569K cn hmsemi
hm50p06.pdf pdf_icon

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON) ... See More ⇒

0.1. Size:648K cn hmsemi
hm50p06k.pdf pdf_icon

8.1. Size:1039K cn hmsemi
hm50p03k.pdf pdf_icon

HM50P03K P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM50P03K uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S Schematic diagram GENERAL FEATURES V = -30V,ID = -50A D S RDS(ON) ... See More ⇒

8.2. Size:1243K cn hmsemi
hm50p03.pdf pdf_icon

HM50P03 P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM50P03 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S Schematic diagram GENERAL FEATURES V = -30V,ID = -50A D S RDS(ON) ... See More ⇒