HM5N30K Datasheet and Replacement
Type Designator: HM5N30K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 58.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 43 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO252
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HM5N30K Datasheet (PDF)
hm5n30k.pdf

300V N-Channel Enhancement Mode MOSFET Description The is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficien
hm5n30r.pdf

HM5N30R Silicon N-Channel Power MOSFETGeneral Description VDSS 300 V HM5N30R, the silicon N-channel Enhanced ID 5 A PD (TC=25) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circ
hm5n30pr.pdf

HM5N30PR Silicon N-Channel Power MOSFETGeneral Description VDSS 300 V HM5N30PR, the silicon N-channel Enhanced ID 5 A PD (TC=25) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching ci
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: VBNC1303 | IRFS4010PBF
Keywords - HM5N30K MOSFET datasheet
HM5N30K cross reference
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History: VBNC1303 | IRFS4010PBF



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