HM5N30K Specs and Replacement
Type Designator: HM5N30K
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 58.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 43 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO252
HM5N30K substitution
- MOSFET ⓘ Cross-Reference Search
HM5N30K datasheet
hm5n30k.pdf
300V N-Channel Enhancement Mode MOSFET Description The is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficien... See More ⇒
hm5n30r.pdf
HM5N30R Silicon N-Channel Power MOSFET General Description VDSS 300 V HM5N30R, the silicon N-channel Enhanced ID 5 A PD (TC=25 ) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circ... See More ⇒
hm5n30pr.pdf
HM5N30PR Silicon N-Channel Power MOSFET General Description VDSS 300 V HM5N30PR, the silicon N-channel Enhanced ID 5 A PD (TC=25 ) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching ci... See More ⇒
Detailed specifications: HM530, HM55N03D, HM5853, HM5N06AR, HM5N06PR, HM5N06R, HM5N20I, HM5N20R, STP80NF70, HM5N30PR, HM5N30R, HM5N50I, HM5N50K, HM5N60, HM5N60F, HM5N60I, HM5N60K
Keywords - HM5N30K MOSFET specs
HM5N30K cross reference
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HM5N30K substitution
HM5N30K replacement
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