HM5N50K Datasheet and Replacement
Type Designator: HM5N50K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO252
HM5N50K substitution
HM5N50K Datasheet (PDF)
hm5n50k hm5n50i.pdf

HM5N50K/HM5N50IHM5N50K/HM5N50I500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.5A, 500V, RDS(on) = 2.0 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 16nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching
Datasheet: HM5N06PR , HM5N06R , HM5N20I , HM5N20R , HM5N30K , HM5N30PR , HM5N30R , HM5N50I , 18N50 , HM5N60 , HM5N60F , HM5N60I , HM5N60K , HM5N65 , HM5N65F , HM5N65I , HM5N65K .
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