HM60N05 Datasheet and Replacement
Type Designator: HM60N05
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 298 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm
Package: TO220
HM60N05 substitution
HM60N05 Datasheet (PDF)
hm60n05.pdf

HM60N05N-Channel Enhancement Mode Power MOSFET Description The HM60N05 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =60A RDS(ON)
hm60n05k.pdf

HM60N05KN-Channel Enhancement Mode Power MOSFET Description The HM60N05K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =60A RDS(ON)
hm60n08.pdf

HM60N08N-Channel Enhancement Mode Power MOSFET Description The HM60N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =60A RDS(ON)
hm60n06k.pdf

HM60N06KDescription The HM60N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON)
Datasheet: HM609K , HM60N02 , HM60N02K , HM60N03 , HM60N03D , HM60N03K , HM60N04 , HM60N04K , 60N06 , HM60N05K , HM60N06 , HM60N06K , HM60N08 , HM60N10D , HM60N20 , HM60N20D , HM60N75K .
Keywords - HM60N05 MOSFET datasheet
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