FDMC7672S MOSFET. Datasheet pdf. Equivalent

   Type Designator: FDMC7672S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: POWER33

FDMC7672S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS

FDMC7672S Datasheet (PDF)

..1. Size:343K fairchild semi
fdmc7672s.pdf pdf_icon

September 2010FDMC7672SN-Channel Power Trench SyncFETTM 30 V, 14.8 A, 6.0 mFeatures General DescriptionThis FDMC7672S is produced using Fairchild Semiconductors Max rDS(on) = 6.0 m at VGS = 10 V, ID = 14.8 Aadvanced Power Trench process that has been especially Max rDS(on) = 7.1 m at VGS = 4.5 V, ID = 12.4 Atailored to minimize the on-state resistance. This d

6.1. Size:208K fairchild semi
fdmc7672.pdf pdf_icon

March 2010FDMC7672N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m Features General Description Max rDS(on) = 5.7 m at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 7.0 m at VGS = 4.5 V, ID = 15.0 Abeen especially tailored to minimize the on-state resistance. This High p

7.1. Size:330K fairchild semi
fdmc7678.pdf pdf_icon

June 2011FDMC7678N-Channel Power Trench MOSFET 30 V, 19.5 A, 5.3 mFeatures General Description Max rDS(on) = 5.3 m at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 6.8 m at VGS = 4.5 V, ID = 15.0 Abeen especially tailored to minimize the on-state resistance. This High

8.1. Size:283K fairchild semi
fdmc7660dc.pdf pdf_icon

January 2011FDMC7660DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mFeatures General Description Dual CoolTM Top Side Cooling PQFN packageThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 2.2 m at VGS = 10 V, ID = 22 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 3.3 m at

8.2. Size:272K fairchild semi
fdmc7696.pdf pdf_icon

November 2011FDMC7696N-Channel PowerTrench MOSFET 30 V, 12 A, 11.5 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 12 ASemiconductors advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10 Abeen especially tailored to minimize the on-state resistance.This device

8.3. Size:205K fairchild semi
fdmc7664.pdf pdf_icon

June 2010FDMC7664N-Channel PowerTrench MOSFET 30 V, 18.8 A, 4.2 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.2 m at VGS = 10 V, ID = 18.8 ASemiconductors advanced Power Trench process that has Max rDS(on) = 5.5 m at VGS = 4.5 V, ID = 16.1 Abeen especially tailored to minimize the on-state resistance. This de

8.4. Size:371K fairchild semi
fdmc7660s.pdf pdf_icon

December 2009FDMC7660SN-Channel Power Trench SyncFET 30 V, 20 A, 2.2 mFeatures General Description Max rDS(on) = 2.2 m at VGS = 10 V, ID = 20 A The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon Max rDS(on) = 2.95 m at VGS = 4.5 V, ID = 18 Aand package technologies have been combined to offer the Hi

8.5. Size:328K fairchild semi
fdmc7692s.pdf pdf_icon

September 2010FDMC7692SN-Channel Power Trench SyncFETTM 30 V, 12.5 A, 9.3 mFeatures General DescriptionThis FDMC7692S is produced using Fairchild Semiconductors Max rDS(on) = 9.3 m at VGS = 10 V, ID = 12.5 Aadvanced Power Trench process that has been especially Max rDS(on) = 13.6 m at VGS = 4.5 V, ID = 10.4 Atailored to minimize the on-state resistance. This

8.6. Size:250K fairchild semi
fdmc7660.pdf pdf_icon

December 2009FDMC7660N-Channel PowerTrench MOSFET 30 V, 20 A, 2.2 m Features General Description Max rDS(on) = 2.2 m at VGS = 10 V, ID = 20 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 18 Abeen especially tailored to minimize the on-state resistance. This High perfo

8.7. Size:207K fairchild semi
fdmc7680.pdf pdf_icon

March 2010FDMC7680N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m Features General Description Max rDS(on) = 7.2 m at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 9.5 m at VGS = 4.5 V, ID = 12.4 Abeen especially tailored to minimize the on-state resistance. This High p

8.8. Size:319K fairchild semi
fdmc7692.pdf pdf_icon

September 2010FDMC7692N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m Features General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.3 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 11.5 m at VGS = 4.5 V, ID = 10.6 Abeen especially tailored to minimize the on-state resistance. This H

8.9. Size:469K onsemi
fdmc7692.pdf pdf_icon

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

LIST

Last Update

All MOSFET. FDMC7672S Datasheet

FDMC7672S MOSFET. Datasheet pdf. Equivalent

FDMC7672S Datasheet (PDF)

LIST

Last Update

AllTransistors(C)