All MOSFET. HM80N06KA Datasheet

 

HM80N06KA MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM80N06KA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 90 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm
   Package: TO252

 HM80N06KA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM80N06KA Datasheet (PDF)

 ..1. Size:702K  cn hmsemi
 hm80n06ka.pdf

HM80N06KA HM80N06KA

HM80N06KAN-Channel Enhancement Mode Power MOSFET Description The HM80N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)

 6.1. Size:564K  cn hmsemi
 hm80n06k.pdf

HM80N06KA HM80N06KA

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)

 8.1. Size:988K  cn hmsemi
 hm80n08k.pdf

HM80N06KA HM80N06KA

HM80N08K N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM80N08K uses advanced trench technology and BVDSS typ. 80 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applications. ID 80 A Features VDS=80VID=

 8.2. Size:602K  cn hmsemi
 hm80n03i.pdf

HM80N06KA HM80N06KA

HM80N03IN-Channel Enhancement Mode Power MOSFET Description The HM80N03I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 8.3. Size:517K  cn hmsemi
 hm80n05k.pdf

HM80N06KA HM80N06KA

HM80N05K N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =50V,ID =80A RDS(ON)

 8.4. Size:583K  cn hmsemi
 hm80n03.pdf

HM80N06KA HM80N06KA

HM80N03N-Channel Enhancement Mode Power MOSFET Description The HM80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 8.5. Size:511K  cn hmsemi
 hm80n03k.pdf

HM80N06KA HM80N06KA

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 8.6. Size:674K  cn hmsemi
 hm80n03ka.pdf

HM80N06KA HM80N06KA

HM80N03KAN-Channel Enhancement Mode Power MOSFET Description The HM80N03KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 8.7. Size:713K  cn hmsemi
 hm80n04.pdf

HM80N06KA HM80N06KA

HM80N04N-Channel Enhancement Mode Power MOSFET Description The HM80N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =80A RDS(ON)

 8.8. Size:841K  cn hmsemi
 hm80n03a.pdf

HM80N06KA HM80N06KA

HM80N03AN-Channel Enhancement Mode Power MOSFET Description The HM80N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 8.9. Size:750K  cn hmsemi
 hm80n04k.pdf

HM80N06KA HM80N06KA

HM80N04KN-Channel Enhancement Mode Power MOSFET Description The HM80N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =80A RDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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