HM80N80B MOSFET. Datasheet pdf. Equivalent
Type Designator: HM80N80B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 81 nC
Rise Time (tr): 53 nS
Drain-Source Capacitance (Cd): 310 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm
Package: TO220
HM80N80B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM80N80B Datasheet (PDF)
hm80n80.pdf
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HM80N80 N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM80N80 uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applications. ID 80 A Features VDS= VID=80
chm80n75ngp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM80N75NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 75 Volts CURRENT 80 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)0.420(10.67)0.190(4.83)* Super high dense cell design for extremely low RDS(ON). 0.380(9.69)0.160(4.
hm80n08k.pdf
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HM80N08K N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM80N08K uses advanced trench technology and BVDSS typ. 80 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applications. ID 80 A Features VDS=80VID=
hm80n03i.pdf
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HM80N03IN-Channel Enhancement Mode Power MOSFET Description The HM80N03I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
hm80n05k.pdf
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HM80N05K N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =50V,ID =80A RDS(ON)
hm80n03.pdf
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HM80N03N-Channel Enhancement Mode Power MOSFET Description The HM80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
hm80n15.pdf
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HM80N15 N-Channel Enhancement Mode Power MOSFET Description The HM80N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =79A RDS(ON)
hm80n06k.pdf
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N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)
hm80n03k.pdf
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N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
hm80n06ka.pdf
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HM80N06KAN-Channel Enhancement Mode Power MOSFET Description The HM80N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)
hm80n03ka.pdf
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HM80N03KAN-Channel Enhancement Mode Power MOSFET Description The HM80N03KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
hm80n70.pdf
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80VDS25VGS66A(ID) N-Channel Enha ncement Mode MOSFET Features Pin Description VDSS=80VVGSS=25VID=66A RDS(ON)=12m(Max.)@VGS=10V Reliable and Rugged Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Applications Synchronous
hm80n04.pdf
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HM80N04N-Channel Enhancement Mode Power MOSFET Description The HM80N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =80A RDS(ON)
hm80n03a.pdf
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HM80N03AN-Channel Enhancement Mode Power MOSFET Description The HM80N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
hm80n04k.pdf
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HM80N04KN-Channel Enhancement Mode Power MOSFET Description The HM80N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =80A RDS(ON)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .