HMS11N60D Datasheet. Specs and Replacement
Type Designator: HMS11N60D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 121 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 87 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO263
HMS11N60D substitution
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HMS11N60D datasheet
hms11n60d hms11n60 hms11n60f.pdf
HMS11N60D,HMS11N60,HMS11N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmax technology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industry s ID 11 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial p... See More ⇒
hms11n60k hms11n60i.pdf
HMS11N60K/HMS11N60I HMS11N60K/HMS11N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 11A, 600V, RDS(on) typ. = 0.34 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 33nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast... See More ⇒
hms11n65k hms11n65i.pdf
HMS11N65K/HMS11N65I HMS11N65K/HMS11N65I 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 11A, 650V, RDS(on) typ. = 0.38 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 33nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast... See More ⇒
hms11n65i hms11n65k.pdf
HMS11N65I / HMS11N65K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri... See More ⇒
Detailed specifications: HM9926B, HM9N90F, HMS100N85D, HMS105N10D, HMS10N60I, HMS10N60K, HMS110N15, HMS11N60, AO3400, HMS11N60F, HMS11N60I, HMS11N60K, HMS11N65, HMS11N65D, HMS11N65F, HMS11N65I, HMS11N65K
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