All MOSFET. HMS11N60D Datasheet

 

HMS11N60D MOSFET. Datasheet pdf. Equivalent


   Type Designator: HMS11N60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 121 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 87 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO263

 HMS11N60D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HMS11N60D Datasheet (PDF)

 ..1. Size:737K  cn hmsemi
 hms11n60d hms11n60 hms11n60f.pdf

HMS11N60D HMS11N60D

HMS11N60D,HMS11N60,HMS11N60FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industrys ID 11 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial p

 6.1. Size:682K  cn hmsemi
 hms11n60k hms11n60i.pdf

HMS11N60D HMS11N60D

HMS11N60K/HMS11N60IHMS11N60K/HMS11N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using H&M Semis - 11A, 600V, RDS(on) typ. = 0.34@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 33nC)This advanced technology has been especially tailored - High ruggednessto minimize conduction loss, provide superior switching - Fast

 7.1. Size:683K  cn hmsemi
 hms11n65k hms11n65i.pdf

HMS11N60D HMS11N60D

HMS11N65K/HMS11N65IHMS11N65K/HMS11N65I650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using H&M Semis - 11A, 650V, RDS(on) typ. = 0.38@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 33nC)This advanced technology has been especially tailored - High ruggednessto minimize conduction loss, provide superior switching - Fast

 7.2. Size:876K  cn hmsemi
 hms11n65i hms11n65k.pdf

HMS11N60D HMS11N60D

HMS11N65I / HMS11N65KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 7.3. Size:703K  cn hmsemi
 hms11n65 hms11n65d hms11n65f.pdf

HMS11N60D HMS11N60D

HMS11N65/ HMS11N65F/HMS11N65DGeneral Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industrys ID 11 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features New technology

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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