FDMC8015L Datasheet. Specs and Replacement

Type Designator: FDMC8015L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 24 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: POWER33

FDMC8015L substitution

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FDMC8015L datasheet

 ..1. Size:322K  fairchild semi
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FDMC8015L

April 2011 FDMC8015L N-Channel Power Trench MOSFET 40 V, 18 A, 26 m Features General Description Max rDS(on) = 26 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has Max rDS(on) = 36 m at VGS = 4.5 V, ID = 6 A been especially tailored to minimize the on-state resistance and Low Profile - 1 m... See More ⇒

 7.1. Size:545K  fairchild semi
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FDMC8015L

December 2014 FDMC8010 N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.8 m at VGS = 4.5 V, ID = 25 A been especially tailored to minimize the on-state resistance. This device is... See More ⇒

 7.2. Size:413K  fairchild semi
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FDMC8015L

January 2015 FDMC8010ET30 N-Channel PowerTrench MOSFET 30 V, 174 A, 1.3 m Features General Description This N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175 C Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 A been especially tailored to minimize the on-state resistance. This device is well suited for... See More ⇒

 7.3. Size:561K  onsemi
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FDMC8015L

FDMC8010 MOSFET N-Channel, POWERTRENCH) 30 V, 75 A, 1.3 mW General Description www.onsemi.com This N-Channel MOSFET is produced using ON Semiconductor s advanced POWERTRENCH process that has been especially tailored Pin 1 Pin 1 S S to minimize the on-state resistance. This device is well suited for S G applications where ultra low rDS(on) is required in small spaces such as... See More ⇒

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Detailed specifications: FDMC7680, STS2301A, FDMC7692, STS2301, FDMC7692S, STS2300S, FDMC7696, STS126, IRF740, FDMC8026S, STP80L60, FDMC8200, STP70L60, FDMC8200S, STP656F, FDMC8462, FDMC8554

Keywords - FDMC8015L MOSFET specs

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