HMS150N04D Datasheet. Specs and Replacement

Type Designator: HMS150N04D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 88 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 1450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm

Package: DFN5X6-8L

HMS150N04D substitution

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HMS150N04D datasheet

 ..1. Size:553K  cn hmsemi
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HMS150N04D

N-Channel Super Trench Power MOSFET Description The HMS150N04D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rec... See More ⇒

 6.1. Size:590K  cn hmsemi
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HMS150N04D

HMS150N06D N-Channel Super Trench Power MOSFET Description The HMS150N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous recti... See More ⇒

 9.1. Size:1235K  cn hmsemi
hms15n70d hms15n70k hms15n70f hms15n70b hms15n70 hms15n70i.pdf pdf_icon

HMS150N04D

HMS15N70K,HMS15N70I,HMS15N70 HMS15N70F, HMS15N70D, HMS15N70B 700V N-Channel MOSFET Features General Description Features -15A, 700V, RDS(on) typ.= 0.3 @VGS = 10 V This Power MOSFET is produced using H&M Semi s Advanced Super-Junction technology. - Low gate charge ( typical 43nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been especially tailore... See More ⇒

 9.2. Size:869K  cn hmsemi
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HMS150N04D

HMS15N65A N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 260 m gate charge. This super junction MOSFET fits the industry s ID 1 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ... See More ⇒

Detailed specifications: HMS11N65K, HMS11N70, HMS11N70B, HMS11N70D, HMS11N70F, HMS11N70I, HMS11N70K, HMS120N03D, 2N7002, HMS150N06D, HMS15N60, HMS15N60A, HMS15N60D, HMS15N60F, HMS15N65, HMS15N65A, HMS15N65D

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