All MOSFET. HMS150N04D Datasheet

 

HMS150N04D Datasheet and Replacement


   Type Designator: HMS150N04D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 1450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: DFN5X6-8L
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HMS150N04D Datasheet (PDF)

 ..1. Size:553K  cn hmsemi
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HMS150N04D

N-Channel Super Trench Power MOSFET Description The HMS150N04D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rec

 6.1. Size:590K  cn hmsemi
hms150n06d.pdf pdf_icon

HMS150N04D

HMS150N06DN-Channel Super Trench Power MOSFET Description The HMS150N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous recti

 9.1. Size:1235K  cn hmsemi
hms15n70d hms15n70k hms15n70f hms15n70b hms15n70 hms15n70i.pdf pdf_icon

HMS150N04D

HMS15N70K,HMS15N70I,HMS15N70HMS15N70F, HMS15N70D, HMS15N70B 700V N-Channel MOSFET FeaturesGeneral Description Features -15A, 700V, RDS(on) typ.= 0.3@VGS = 10 V This Power MOSFET is produced using H&M SemisAdvanced Super-Junction technology. - Low gate charge ( typical 43nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been especially tailore

 9.2. Size:869K  cn hmsemi
hms15n65a.pdf pdf_icon

HMS150N04D

HMS15N65AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 260 m gate charge. This super junction MOSFET fits the industrys ID 1 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: TPA65R940C | TW2203FL-Y | SVF7N60CSTR | IRF4905LPBF | 1N60 | SVS11N70MJD2 | FDMC8327L

Keywords - HMS150N04D MOSFET datasheet

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