HMS17N65D MOSFET. Datasheet pdf. Equivalent
Type Designator: HMS17N65D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 145 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29 nC
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 115 pF
Maximum Drain-Source On-State Resistance (Rds): 0.21 Ohm
Package: TO263
HMS17N65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HMS17N65D Datasheet (PDF)
hms17n65 hms17n65f hms17n65d.pdf
HMS17N65D, HMS17N65, HMS17N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 210 m gate charge. This super junction MOSFET fits the industrys ID 1 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power app
hms170n03d.pdf
HMS170N03DN-Channel Super Trench Power MOSFET Description The HMS170N03D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif
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