All MOSFET. HMS18N10D Datasheet

 

HMS18N10D Datasheet and Replacement


   Type Designator: HMS18N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 44.2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: DFN5X6-8L
 

 HMS18N10D substitution

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HMS18N10D Datasheet (PDF)

 ..1. Size:1354K  cn hmsemi
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HMS18N10D

HMS18N10DN-Channel Enhancement Mode Power MOSFET Description The HMS18N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =18A RDS(ON)

 6.1. Size:1002K  cn hmsemi
 hms18n10q.pdf pdf_icon

HMS18N10D

HMS18N10QN-Channel Enhancement Mode Power MOSFET Description The HMS18N10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =18A RDS(ON)

 8.1. Size:1142K  cn hmsemi
 hms18n80 hms18n80f.pdf pdf_icon

HMS18N10D

HMS18N80,HMS18N80FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS 800 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 280 m gate charge. This super junction MOSFET fits the industrys ID 18 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applicatio

Datasheet: HMS15N70D , HMS15N70F , HMS15N70I , HMS15N70K , HMS170N03D , HMS17N65 , HMS17N65D , HMS17N65F , STP80NF70 , HMS18N10Q , HMS18N80 , HMS18N80F , HMS200N04D , HMS20N15K , HMS21N60 , HMS21N60A , HMS21N60F .

History: NTB35N15G | PPMT20V4E | STS8DN3LLH5 | VB162KX | HMS17N65F | HMS170N03D | AP65SL099DI

Keywords - HMS18N10D MOSFET datasheet

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