All MOSFET. HMS18N80 Datasheet

 

HMS18N80 Datasheet and Replacement


   Type Designator: HMS18N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO220
 

 HMS18N80 substitution

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HMS18N80 Datasheet (PDF)

 ..1. Size:1142K  cn hmsemi
 hms18n80 hms18n80f.pdf pdf_icon

HMS18N80

HMS18N80,HMS18N80FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS 800 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 280 m gate charge. This super junction MOSFET fits the industrys ID 18 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applicatio

 8.1. Size:1002K  cn hmsemi
 hms18n10q.pdf pdf_icon

HMS18N80

HMS18N10QN-Channel Enhancement Mode Power MOSFET Description The HMS18N10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =18A RDS(ON)

 8.2. Size:1354K  cn hmsemi
 hms18n10d.pdf pdf_icon

HMS18N80

HMS18N10DN-Channel Enhancement Mode Power MOSFET Description The HMS18N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =18A RDS(ON)

Datasheet: HMS15N70I , HMS15N70K , HMS170N03D , HMS17N65 , HMS17N65D , HMS17N65F , HMS18N10D , HMS18N10Q , TK10A60D , HMS18N80F , HMS200N04D , HMS20N15K , HMS21N60 , HMS21N60A , HMS21N60F , HMS21N65 , HMS21N65A .

History: VB2658 | AON3611 | TSM4936DCS | AO6432 | IRL3716 | BUK9Y29-40E | AO6602

Keywords - HMS18N80 MOSFET datasheet

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