All MOSFET. HMS21N65 Datasheet

 

HMS21N65 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HMS21N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   Rise Time (tr): 6 nS
   Drain-Source Capacitance (Cd): 150 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm
   Package: TO220

 HMS21N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HMS21N65 Datasheet (PDF)

 ..1. Size:817K  cn hmsemi
hms21n65 hms21n65f.pdf

HMS21N65
HMS21N65

HMS21N65,HMS21N65FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications

 0.1. Size:779K  cn hmsemi
hms21n65a.pdf

HMS21N65
HMS21N65

HMS21N65AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features

 7.1. Size:978K  cn hmsemi
hms21n60a.pdf

HMS21N65
HMS21N65

HMS21N60AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. F

 7.2. Size:1054K  cn hmsemi
hms21n60 hms21n60f.pdf

HMS21N65
HMS21N65

HMS21N60,HMS21N60FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applica

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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