All MOSFET. HMS28N65D Datasheet

 

HMS28N65D MOSFET. Datasheet pdf. Equivalent


   Type Designator: HMS28N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 260 W
   Maximum Drain-Source Voltage |Vds|: 650 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 28 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 37.5 nC
   Rise Time (tr): 12 nS
   Drain-Source Capacitance (Cd): 120 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm
   Package: TO263

 HMS28N65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HMS28N65D Datasheet (PDF)

 ..1. Size:792K  cn hmsemi
 hms28n65 hms28n65d hms28n65f.pdf

HMS28N65D HMS28N65D

HMS28N65/HMS28N65D/HMS28N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and ind

 6.1. Size:676K  cn hmsemi
 hms28n65t.pdf

HMS28N65D HMS28N65D

HMS28N65TN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appli

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF4905 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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