All MOSFET. HMS4030D Datasheet

 

HMS4030D Datasheet and Replacement


   Type Designator: HMS4030D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 115 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO263
 

 HMS4030D substitution

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HMS4030D Datasheet (PDF)

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HMS4030D

HMS4030DN-Channel Super Trench Power MOSFET Primary Version Description The HMS4030D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and

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HMS4030D

HMS4030N-Channel Super Trench Power MOSFET Primary Version Description The HMS4030 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and sy

 9.1. Size:1130K  cn hmsemi
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HMS4030D

HMS40N10DN-Channel Super Trench Power MOSFET Description The HMS40N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectifi

Datasheet: HMS29N65D , HMS29N65F , HMS3205 , HMS3205D , HMS35DN10DA , HMS35N10K , HMS38N60T , HMS4030 , IRF1405 , HMS40N10D , HMS4110T , HMS4260 , HMS4264 , HMS4290 , HMS4294 , HMS4296 , HMS4296B .

History: VBZFB80N03

Keywords - HMS4030D MOSFET datasheet

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