All MOSFET. 2SK2554 Datasheet

 

2SK2554 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2554

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 7700 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0058 Ohm

Package: TO3P

2SK2554 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2554 Datasheet (PDF)

1.1. 2sk2554.pdf Size:90K _renesas

2SK2554
2SK2554

2SK2554 Silicon N Channel MOS FET REJ03G1016-0600 (Previous: ADE-208-359D) Rev.6.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 4.5 m? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain (Flange) 3. S

1.2. rej03g1016 2sk2554ds.pdf Size:103K _renesas

2SK2554
2SK2554

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.1. 2sk2556.pdf Size:389K _update-mosfet

2SK2554
2SK2554

注文コード No. N 5317A 2SK2556 No. N5317A 70999 開発速報 No. ※ 5317 とさしかえてください。 N チャネル MOS 形シリコン電界効果トランジスタ 2SK2556 DC / DC コンバータ用超高速スイッチング 特長 ・低オン抵抗。 ・超高速スイッチング 。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃ unit ド

4.2. 2sk2550.pdf Size:137K _toshiba

2SK2554
2SK2554

2SK2550 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2550 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 24 m? (typ.) High forward transfer admittance : |Y | = 27 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 50 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V =

 4.3. 2sk2551.pdf Size:385K _toshiba

2SK2554
2SK2554

2SK2551 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2551 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 7.2 m? (typ.) High forward transfer admittance : |Y | = 50 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 50 V) DSS DS Enhancement-mode : Vth = 1.5~3.0 V (V

4.4. 2sk2555.pdf Size:42K _sanyo

2SK2554
2SK2554

Ordering number:ENN5316A N-Channel Silicon MOSFET 2SK2555 DC/DC Converter Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2083B 4V drive. [2SK2555] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SK2555] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3

 4.5. 2sk2553.pdf Size:96K _renesas

2SK2554
2SK2554

2SK2553(L), 2SK2553(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1015-1000 (Previous: ADE-208-357H) Rev.10.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 7 m? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code

4.6. rej03g1015 2sk2553lsds.pdf Size:109K _renesas

2SK2554
2SK2554

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.7. 2sk2552.pdf Size:240K _nec

2SK2554
2SK2554

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK2552 is suitable for converter of ECM. 0.3 +0.1 –0 0.15+0.1 –0.05 FEATURES • Compact package 3 • High forward transfer admittance 0 to 0.1 1000 µS TYP. (IDSS = 100 µA) 2 1 1600 µS TY

Datasheet: 2SK2521-01 , 2SK2522-01MR , 2SK2523-01 , 2SK2524-01MR , 2SK2525-01 , 2SK2529 , 2SK2541 , 2SK2553 , IRFP460 , 2SK2586 , 2SK2684 , 2SK2701 , 2SK2702 , 2SK2703 , 2SK2704 , 2SK2705 , 2SK2706 .

 

 
Back to Top

 


2SK2554
  2SK2554
  2SK2554
 

social 

LIST

Last Update

MOSFET: US6U37 | US6M2 | US6M11 | US6M1 | US6K4 | US6K2 | US6K1 | US6J11 | US5U38 | US5U35 | US5U30 | US5U3 | US5U29TR | US5U2 | US5U1 |

 

 

 
Back to Top