HMS4N70D MOSFET. Datasheet pdf. Equivalent
Type Designator: HMS4N70D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.5 nC
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 26 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO263
HMS4N70D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HMS4N70D Datasheet (PDF)
hms4n70 hms4n70d hms4n70f.pdf
HMS4N70,HMS4N70D,HMS4N70FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 700 V technology and design to provide excellent RDS(ON) with low RDS(ON)TYP. 1200 m gate charge. This super junction MOSFET fits the industrys ID 4 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app
hms4n70k hms4n70i.pdf
HMS4N70K,HMS4N70I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 700 V DStechnology and design to provide excellent RDS(ON) with low RDS(ON)TYP. 1200 m gate charge. This super junction MOSFET fits the industrys ID 4 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
