HMS4N70D Datasheet and Replacement
Type Designator: HMS4N70D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 26 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO263
HMS4N70D Datasheet (PDF)
hms4n70 hms4n70d hms4n70f.pdf

HMS4N70,HMS4N70D,HMS4N70FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 700 V technology and design to provide excellent RDS(ON) with low RDS(ON)TYP. 1200 m gate charge. This super junction MOSFET fits the industrys ID 4 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app
hms4n70k hms4n70i.pdf

HMS4N70K,HMS4N70I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 700 V DStechnology and design to provide excellent RDS(ON) with low RDS(ON)TYP. 1200 m gate charge. This super junction MOSFET fits the industrys ID 4 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Datasheet: HMS4438 , HMS4444A , HMS4454 , HMS45N15D , HMS45N15K , HMS47N60A , HMS47N65A , HMS4N70 , IRF740 , HMS4N70F , HMS4N70I , HMS4N70K , HMS50N12DA , HMS50N15LD , HMS5N90I , HMS5N90K , HMS60N04EQ .
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