HMS60N04EQ Datasheet. Specs and Replacement
Type Designator: HMS60N04EQ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 639 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: DFN3.3X3.3-8L
HMS60N04EQ substitution
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HMS60N04EQ datasheet
hms60n04eq.pdf
HMS60N04EQ N-Channel Super Trench Power MOSFET Description The HMS60N04EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous recti... See More ⇒
hms60n06d.pdf
HMS60N06D N-Channel Super Trench Power MOSFET Description The HMS60N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switching and synchronous re... See More ⇒
hms60n10d.pdf
HMS60N10D N-Channel Super Trench Power MOSFET Primary Version Description The HMS60N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching an... See More ⇒
Detailed specifications: HMS4N70D, HMS4N70F, HMS4N70I, HMS4N70K, HMS50N12DA, HMS50N15LD, HMS5N90I, HMS5N90K, IRF640, HMS60N06D, HMS60N10D, HMS65N03Q, HMS75N65T, HMS7N65I, HMS7N65K, HMS7N70I, HMS7N70K
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